Patented DHX (Dual-Path Heat Xchange) Technology
Delivers Record-Breaking Speeds

Fremont, CA, February 19th, 2008 – Corsair® www.corsair.com, a worldwide leader in high performance computer and flash memory products, announced today that new record breaking speeds have been achieved within the Corsair DDR2 and DDR3 lines of DRAM memory.
Maximum Performance & Extreme Over-Clocking for Demanding Gaming Enthusiasts
Available by the end of February, two new Corsair 4GB DDR2 module speed grades are being offered for high-performance enthusiast users: Corsair 1066MHz (PC2-8500) and 1142MHz (PC2-9136) 4GB memory kits (2X2GB). The new memory modules …

How do 200MBps reads and 100MBps writes in a storage device sound to you? Pretty sweet if you ask us.
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Intel and Micron Develop the World’s Fastest NAND Flash Memory with 5X Faster Performance

New High Speed NAND Technology Targeted at Computing, Video, Photography and Other Consumer Applications
BOISE, Idaho and SANTA CLARA, Calif., Feb. 1, 2008 – Intel Corporation and Micron Technology Inc. today unveiled a high speed NAND flash memory technology that can greatly enhance the access and transfer of data in devices that use silicon for …

EAH3870X2/G/3DHTI/1G Delivers Superb Graphic Performance with Upgraded 0.8ns Memory and Two Extra DVI Outputs
Taipei, Taiwan, January 23, 2008 – ASUS, producer of top quality graphic solutions, has today unveiled the latest generation of AMD GPUs – the world´s first on-board dual RV670XT, with the ASUS EAH3870X2/G/3DHTI/1G and EAH3870X2/G/HTDI/1G. The EAH3870X2/G/3DHTI/1G comes equipped with the fastest upgraded DRR3 0.8ns memory modules and two exclusive extra DVI outputs. It also comes specially designed with dual fansinks for both GPUs – ensuring efficient heat dissipation. On top of all this, the ASUS EAH3870X2 …

DDR-3 is the next-generation evolution of DDR and newer DDR-2 memory technology that will break the Gigahertz speed barrier for memory speed.
DDR-3 memory comes with a promise of a power consumption reduction of 30% compared to current DDR-2 modules, due to DDR-3’s 1.5 V supply voltage, compared to DDR-2’s 1.8 V or DDR-1’s 2.5 V. This supply voltage works well with the latest fabrication technology used for most DDR-3 chips. Some manufacturers further propose to use “dual-gate” transistors to reduce leakage of current.
DDR-3 is an industry standard technology defined by …